Weak localisation theory for lightly doped semiconductor quantum wires

Weak localisation theory for lightly doped semiconductor quantum wires

A weak localisation theory for a semiconductor quantum wire, which has a width of the order of the Fermi wavelength, is presented. In our model the electronic motion is essentially one-dimensional and the localisation length L, is much larger than the mean free path I , so that, in contrast to conventional theories a non-localised quantum wire with a total length L < L, but much larger than I i...

Inhomogeneous boundary effects in semiconductor quantum wires

Abslract Boundary effects play an essential role in determining the physical properties of semiconductor quantum wires. Additional features come into play when one considers inhomogeneous boundaries, i.e. wires whose widths are functions of distance along the length of the wire. We show that, in the adiabatic approximation (which assumes that the boundary patential fluctuation effects, or equiv...

Heavily doped semiconductor nanocrystal quantum dots.

Doping of semiconductors by impurity atoms enabled their widespread technological application in microelectronics and optoelectronics. However, doping has proven elusive for strongly confined colloidal semiconductor nanocrystals because of the synthetic challenge of how to introduce single impurities, as well as a lack of fundamental understanding of this heavily doped limit under strong quantu...

Exciton spin polarization in magnetic semiconductor quantum wires

Electron-beam lithography and wet etching techniques are used to laterally pattern ZnSe/ ~Zn,Cd,Mn!Se single quantum wells into magnetically active quantum wires with widths ranging from 20 to 80 nm. Photoluminescence spectroscopy as a function of wire width reveals a competition between elastic strain relaxation and quantum confinement. Magnetophotoluminescence measurements at low temperatures...

Supporting Online Material for Heavily Doped Semiconductor Nanocrystal Quantum Dots